設備名稱 Equipment Name

HJT板式等離子體增強化學氣相沉積設備  HJT In-line PECVD

設備型號 Equipment Model

PD-1022/UD

設備用途 Equipment Application

制備本征及摻雜非晶硅薄膜。

Intrinsic film deposition & a-si film doping.

設備工藝  Processes

工藝氣體在射頻RF電磁場環(huán)境中電離相互反應，在襯底上沉積出相應的薄膜材料。

Ionized precursor gases deposit thin films on a substrate.

技術(shù)特點  Features

1、較小反射功率的快速啟輝、均勻穩(wěn)定大面積成膜。

Quick RF ignition with least reflect power for uniform and stable film deposition.

2、成熟穩(wěn)定的多點饋入射頻RF技術(shù)、技術(shù)兼容性和產(chǎn)品升級。

Matured and stable multi-feed in RF technology compatible for even large process chamber.

3、腔體內(nèi)反應間距可調(diào)、靈活的工藝窗口。

Continuous adjustable gas between diffuser and substrate providing flexible process possibilities.

4、大產(chǎn)能低成本、定制設備結(jié)構(gòu)。

High throughput with relative low cost, with capability of customized product design.

5、模塊化設計便于安裝和維護、高標準的安全設計思想。

Modularized design for easy installation and maintenance, together with highest safety protocol from design to fabrication.

設備參數(shù)  Parameters